Authors |
Nishchev Konstantin Nikolaevich, Сandidate of physical and mathematical sciences, associate professor, director of the Institute of physics and chemistry, Ogarev Mordovia State University (68 Bolshevistskaya street, Saransk, Russia), nishchev@inbox.ru
Novopol'tsev Mikhail Il'ich, Сandidate of physical and mathematical sciences, associate professor, sub-department of general physics, Ogarev Mordovia State University (68 Bolshevistskaya street, Saransk, Russia), nishchev@inbox.ru
Sigachev Aleksandr Fedorovich, Leading engineer, sub-department of solid state physics, Ogarev Mordovia State University (68 Bolshevistskaya street, Saransk, Russia), siaf@mail.ru
Mishkin Vladimir Petrovich, Leading engineer, sub-department of general physics, Ogarev Mordovia State University (68 Bolshevistskaya street, Saransk, Russia), siaf@mail.ru
Grishanin Aleksey Vladimirovich, Junior researcher, sub-department of semiconductor materials and devices, Ogarev Mordovia State University (68 Bolshevistskaya street, Saransk, Russia), grav82@list.ru
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References |
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